Competition between damage buildup and dynamic annealing in ion implantation into Ge

Channeling implantation of Ga into Ge is performed at two very different ion fluxes (10(12) and 10(19) cm(-2) s(-1)), at two temperatures (room temperature and 250 degrees C), and at five different fluences. The fluence dependence of the range profiles and of the implantation damage is strongly influenced by defect accumulation and dynamic annealing. At 250 degrees C, the maximum lifetime of the defects is less than 10 s. On the other hand, at room temperature no significant annealing is found within the first 10 s after ion impact. The measured Ga depth profiles are reproduced very well by atomistic computer simulations. (c) 2006 American Institute of Physics. (c) 2006 American Institute of Physics.