The conduction band offset of n-ZnO/n-6H-SiC heterostructures fabricated by rf-sputtered ZnO on commercial n-type 6H-SiC substrates has been measured by a variety of methods. Temperature dependent current-voltage characteristic, photocapacitance, and deep level transient spectroscopy measurements showed the conduction band offsets to be 1.25, 1.1, and 1.22 eV, respectively. (c) 2006 American Institute of Physics.
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