Monolithic microfabricated ion trap chip design for scaleable quantum processors

A design is proposed for a novel ion trap quantum processor chip, microfabricated using a process based on planar silica-on-silicon techniques. The trap electrodes are of gold-coated silica and are spaced by highly doped silicon in a monolithic structure. This design allows a unit aspect-ratio trap with an ion-electrode separation below 100 mu m, when using current fabrication techniques. The trapping potential is modelled and the operating parameters required to achieve motional frequencies of a few MHz are calculated. RF loss and the resultant heating of the trap chip are not found to be a factor limiting the trap's operation. This monolithic unit aspect-ratio trap is therefore expected to exhibit a deep potential well, high trap efficiency, and a low RF loss, when compared to other microfabricated traps. This technological approach is in principle scaleable to complex devices, and may form the basis for large-scale ion trap quantum processors.