期刊
NANOTECHNOLOGY
卷 17, 期 19, 页码 4873-4876出版社
IOP PUBLISHING LTD
DOI: 10.1088/0957-4484/17/19/016
关键词
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A simple technique for fabricating single nanowires with well-defined position is presented. The process implies the use of a silicon nitride mask for selective electrochemical growth of the nanowires in a porous alumina template. We show that this method allows the realization of complex nanowire patterns as well as arrays of single nanowires with a precise position and spacing.
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