期刊
NANOTECHNOLOGY
卷 17, 期 19, 页码 4811-4818出版社
IOP PUBLISHING LTD
DOI: 10.1088/0957-4484/17/19/005
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The controllable growth of vertically aligned ZnO nanowires using a simple vapour deposition method system is reported. The growth properties are studied as a function of the thickness of the Au catalyst layer, total pressure, deposition temperature and oxygen partial pressure. The experiments indicate the existence of five main zones of growth. The zone in which the aligned wires grow varies according to the pressure, temperature and oxygen partial pressure. A specific level of low supersaturation of Zn and oxygen vapour are both necessary to ensure the correct rate of growth, which then leads to having thin and densely aligned wires. The growth kinetics are discussed in terms of the interdependent variables. It was found that the diameter and density of the nanowires is controlled mostly by the growth temperature and pressure. The zone with the most aligned nanowires with the highest aspect ratio was found to be at 5 mbar in a temperature range of 860-800 degrees C with a flow of 27 sccm of a N-2/O-2 mixture.
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