4.4 Article

Crystal morphology evolution in film growth: A general approach

期刊

JOURNAL OF CRYSTAL GROWTH
卷 296, 期 1, 页码 86-96

出版社

ELSEVIER SCIENCE BV
DOI: 10.1016/j.jcrysgro.2006.08.024

关键词

crystal morphology; diffusion; growth models; interfaces; metalorganic chemical vapor deposition

向作者/读者索取更多资源

Most crystal growth processes involve many competing mechanisms, all of which can affect the observed morphology evolution. This paper provides a framework for understanding growth competition and determining which mechanisms dominate the morphology under different conditions. The approach is based upon the development of a generalized growth law combined with asymptotic analysis. Next, we show how this model unifies many of the physical processes that are known to be of importance in film growth. Next, we provide a graph theoretic method for analyzing growth competition and identifying the morphology-determining processes and parameters. As an example, we apply the present approach to the case of metalorganic chemical vapor deposition of GaN. Finally, we examine how the mechanisms that control morphology evolution change as the crystal grows larger. (c) 2006 Elsevier B.V. All rights reserved.

作者

我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。

评论

主要评分

4.4
评分不足

次要评分

新颖性
-
重要性
-
科学严谨性
-
评价这篇论文

推荐

暂无数据
暂无数据