The authors present a low voltage cathodoluminescence (CL) study of as grown GaN and GaN:Si epilayers on sapphire. At 1 kV they resolve individual threading dislocations on the sample surface at low temperature (5 K), which appear as correlated dark spots. Analysis of CL intensity profiles across individual dislocation cores provides a direct measurement of the exciton and minority carrier diffusion lengths. Using this approach at 5 K, an exciton diffusion length of 62 +/- 28 nm was found for GaN:Si (similar to 3x10(18) cm(-3)) compared with 81 +/- 20 nm for a nominally undoped n-type GaN (similar to 1x10(16) cm(-3)). (c) 2006 American Institute of Physics.
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