Sintered HgTe nanocrystal-based thin-film transistors (TFTs) with bottom- and top-gate geometries were fabricated at a temperature of 150 degrees C by spin coating in this work. The SiO2 bottom- and Al2O3 top-gate field-effect TFTs with p channels composed of sintered HgTe nanocrystals exhibit high carrier mobilities of 0.82 and 2.38 cm(2)/V s, respectively. The operating gate voltages for the top-gate transistor with an Al2O3 dielectric layer are actually lower, compared with the SiO2 bottom-gate transistor. The electrical characteristics of these TFTs are discussed in more detail in this letter. (c) 2006 American Institute of Physics.
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