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Room-temperature intersubband emission of GaN/AlN quantum wells at λ=2.3μm

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ELECTRONICS LETTERS
卷 42, 期 22, 页码 1308-1309

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INSTITUTION ENGINEERING TECHNOLOGY-IET
DOI: 10.1049/el:20062282

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Optically-pumped intersubband emission of GaN/AIN quantum wells at room temperature has been experimentally demonstrated for the first time. The peak emission wavelength is at lambda=2.3 mu m. It is the shortest value ever reported for an intersubband device.

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