4.6 Article

Low-operating-voltage pentacene field-effect transistor with a high-dielectric-constant polymeric gate dielectric

期刊

APPLIED PHYSICS LETTERS
卷 89, 期 18, 页码 -

出版社

AMER INST PHYSICS
DOI: 10.1063/1.2374864

关键词

-

向作者/读者索取更多资源

Low-operating-voltage organic field-effect transistor has been realized by using the cross-linked cyanoethylated poly(vinyl alcohol) (CR-V) as a gate dielectric. The cross-linked CR-V dielectric was found to have a high dielectric constant of 12.6 and good insulating properties, resulting in a high capacitance (92.9 nF/cm(2) at 20 Hz) for a dielectric thickness of 120 nm. A pentacene field-effect transistor fabricated with the cross-linked CR-V dielectric was found to exhibit a high carrier mobility (0.62 cm(2)/V s), a small subthreshold swing (185 mV/decade), and little hysteresis at low operating voltages (<=-3 V). (c) 2006 American Institute of Physics.

作者

我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。

评论

主要评分

4.6
评分不足

次要评分

新颖性
-
重要性
-
科学严谨性
-
评价这篇论文

推荐

暂无数据
暂无数据