Low-operating-voltage organic field-effect transistor has been realized by using the cross-linked cyanoethylated poly(vinyl alcohol) (CR-V) as a gate dielectric. The cross-linked CR-V dielectric was found to have a high dielectric constant of 12.6 and good insulating properties, resulting in a high capacitance (92.9 nF/cm(2) at 20 Hz) for a dielectric thickness of 120 nm. A pentacene field-effect transistor fabricated with the cross-linked CR-V dielectric was found to exhibit a high carrier mobility (0.62 cm(2)/V s), a small subthreshold swing (185 mV/decade), and little hysteresis at low operating voltages (<=-3 V). (c) 2006 American Institute of Physics.
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