期刊
PHYSICAL REVIEW B
卷 74, 期 20, 页码 -出版社
AMERICAN PHYSICAL SOC
DOI: 10.1103/PhysRevB.74.201302
关键词
-
We report on the transport measurements of two-dimensional holes in GaAs field-effect transistors with record low densities down to 7x10(8) cm(-2). Remarkably, such a dilute system (with Fermi wavelength approaching 1 mu m) exhibits a nonactivated conductivity that grows with temperature approximately as a power law at sufficiently low temperatures. We contrast it with the activated transport found in more disordered samples and discuss possible transport mechanisms in this strongly interacting regime.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据