期刊
MICROELECTRONICS JOURNAL
卷 37, 期 11, 页码 1302-1305出版社
ELSEVIER SCI LTD
DOI: 10.1016/j.mejo.2006.07.007
关键词
thick film; Ni((1-x))CoxMn2O4; dielectric constant; microstrip ring resonator; overlay
The effect of thick film Ni(1-x)CoxMn2O4 in-touch overlay on the X band resonance characteristics of thick film microstrip ring resonator is studied. The thick film overlay decreases the resonance frequency and increases the peak output. From the frequency shift the dielectric constant of the thick film Ni(1-x)CoxMn2O4 has been calculated. For the first time Ag thick film microstrip ring resonator has been used to study thick film Ni(1-x)CoxMn2O4 in the X band. (c) 2006 Elsevier Ltd. All rights reserved.
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