An analysis for AlGaN/GaN modulation doped field effect transistor using accurate velocity-field dependence for high power microwave frequency applications

An analytical model of Al0.15Ga0.85N/GaN modulation doped field effect transistor (MODFET), which uses an accurate velocity field relationship and incorporates the dominant effect of piezoelectric polarization induced charge at the AlGaN/GaN interface is presented. The effect of traps has also been taken into account. The calculated DC characteristics are in excellent agreement with the measured data. The model is extended to predict the microwave performance of the device. High current levels (> 500 mA/mm), large transconductance (160.83 mS/mm) and a high cutoff frequency (9.6 GHz) have been achieved analytically and are in close agreement with the experimental data. (c) 2006 Elsevier Ltd. All rights reserved.