Study of impact of access resistance on high-frequency performance of AlGaN/GaN HEMTs by measurements at low temperatures

This letter studies the effect of access resistance on the high-frequency performance of AlGaN/GaN high-electronmobility transistors. To systematically reduce the sheet access resistance, the transistors were measured at different temperatures. The increase of mobility at lower temperatures allowed more than four-fold reduction in the sheet access resistances. Both the current- and power-gain cutoff frequencies are observed to increase at low temperatures. Also, the intrinsic effective velocity has been estimated in these devices, as well as the parasitic delays involved in the final performance. Channel charging delay, which was expected to be most sensitive to parasitics, is observed to decrease at low temperatures. However, the drain delay, intrinsic delay, and effective electron velocity remain unaffected by temperature.