期刊
JOURNAL OF MATERIALS RESEARCH
卷 21, 期 11, 页码 2882-2887出版社
CAMBRIDGE UNIV PRESS
DOI: 10.1557/JMR.2006.0350
关键词
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The deformation behavior of single-crystal GaN nanowires was studied by directly performing three-point bending tests on each individual nanowire in an atomic force microscope. The elastic modulus calculated from the load-displacement response of the nanowires was 43.9 +/- 2.2 GPa. Single-crystal GaN nanowires investigated in this study were synthesized by chemical vapor deposition techniques based on the vapor-liquid-solid growth mechanism and had a diameter range from 60 to 110 nm. Crystalline GaN nanowires did not show obvious plastic deformation in bending and usually failed in a brittle manner.
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