期刊
SCIENCE
卷 314, 期 5801, 页码 974-977出版社
AMER ASSOC ADVANCEMENT SCIENCE
DOI: 10.1126/science.1133781
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Metallic and semiconducting carbon nanotubes generally coexist in as-grown materials. We present a gas-phase plasma hydrocarbonation reaction to selectively etch and gasify metallic nanotubes, retaining the semiconducting nanotubes in near-pristine form. With this process, 100% of purely semiconducting nanotubes were obtained and connected in parallel for high-current transistors. The diameter- and metallicity-dependent dry chemical etching approach is scalable and compatible with existing semiconductor processing for future integrated circuits.
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