Stable, three layered organic memory devices from C60 molecules and insulating polymers

Memory devices based on C-60 fullerene molecules and polystyrene and poly 4-vinyl phenol polymers are described. It is shown that the bistability in the I-V characteristics can be used to perform read-write-erase memory functions. In addition, it is demonstrated that mild thermal annealing enhances the stability of the devices. Specifically, after annealing, the hysteresis in our devices can be preserved up to 85 degrees C in 60% humidity. Furthermore, memory retention tests show that it is possible to preserve a state even after annealing at 85 degrees C in 60% humidity for 30 min. (c) 2006 American Institute of Physics.