Microcrystalline silicon thin-film transistors were prepared by plasma-enhanced chemical vapor deposition at substrate temperatures below 200 degrees C. The transistors exhibit electron mobilities of 38 cm(2)/V s, threshold voltages in the range of 2 V, and subthreshold slopes of 0.3 V/decade. Despite the realization of transistors with high carrier mobility, contact effects limit the performance of the transistors. The influence of the drain and source contacts on device parameters including the mobility, the threshold voltage, and the subthreshold slope will be discussed in detail. (c) 2006 American Institute of Physics.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据