4.4 Article

Thickness dependence of the surface plasmon dispersion in. ultrathin aluminum films on silicon

期刊

SURFACE SCIENCE
卷 600, 期 22, 页码 4966-4971

出版社

ELSEVIER SCIENCE BV
DOI: 10.1016/j.susc.2006.08.020

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Al thin films; scanning tunneling microscopy; high-resolution-electron-energy-loss spectroscopy; surface plasmon

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The collective excitation in Al films deposited on Si(111)-7 x 7 surface was investigated by high-resolution electron-energy-loss spectroscopy (HREELS), X-ray photoelectron spectroscopy (XPS) and scanning tunneling microscopy (STM). At the Al film thickness d < 10 ML, the surface plasmon of Al film has only a small contribution to the observed energy-loss peaks in the long wavelength limit (q(parallel to) approximate to 0), while its contribution becomes significant for q(parallel to) > d(-1). More interestingly, for thin Al films, the initial slope of the surface plasmon dispersion curve is positive at q(parallel to) similar to 0, in a sharp contrast to bulk Al surface where the energy dispersion is negative. These observations may be explained based on the screening interaction of the space charge region at the Al-Si interface. (c) 2006 Elsevier B.V. All rights reserved.

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