Microwave thin-film transistors using Si nanomembranes on flexible polymer substrate

Large-feature-size single-crystal Si thin-film transistors (TFTs) with f(T) of 1.9 GHz and f(max) of 3.1 GHz were demonstrated on flexible polymer substrate. In this letter, the authors detail the fabrication process that enables TFTs, made on low-temperature flexible substrates, to operate at microwave frequencies under low bias voltages. The outstanding electrical performance results measured from these devices, such as high electron mobility, high current drive capability, and high frequency response characteristics, and the simple process procedures for producing these devices on flexible substrate make flexible electronics highly promising for power-efficient large-area radio-frequency and microwave applications. (c) 2006 American Institute of Physics.