Si-assisted growth of InAs nanowires

The authors report on the growth of InAs nanowires using nanometer-sized Si clusters in a closed system without any metal catalyst. The growth was performed at 580 degrees C for 30 min using 1.3 nm thickness of SiOx. It is suggested that the nanowire growth occurred due to highly reactive nanometer-sized Si clusters, which are formed by phase separation of SiOx. The authors have also examined the vapor-liquid-solid (VLS) mechanism under various oxidizing conditions, including different oxygen pressures (200 and 800 mTorr) and oxidized Au-In tip. The results indicate the inhibiting effect of oxygen on the VLS mechanism. (c) 2006 American Institute of Physics.