期刊
NANOTECHNOLOGY
卷 17, 期 22, 页码 5675-5680出版社
IOP PUBLISHING LTD
DOI: 10.1088/0957-4484/17/22/023
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The effect of high-energy proton irradiation on the physical properties of carbon nanotubes ( CNTs) was investigated. The focus of the study was on the electrical properties of single-walled carbon nanotube ( SWNT) network devices exposed to proton beams. Field-effect transistors ( FETs) of network type were fabricated using SWNTs and were then irradiated by high-energy proton beams of 10-35 MeV with a fluence of 4 x 10(10)-4 x 10(12) cm(-2) that are comparable to the aerospace radiation environment. The electrical properties of both metallic and semiconducting CNT network FET devices underwent no significant change after the high-energy proton irradiation, indicating that the CNT network devices are very tolerant in proton beams. Raman spectra confirm the proton-radiation hardness of CNT network FET devices. The radiation hardness of CNT network FET devices promises therefore the potential usefulness of CNT-based electronics for future space application.
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