期刊
SOLID STATE IONICS
卷 177, 期 35-36, 页码 3123-3127出版社
ELSEVIER
DOI: 10.1016/j.ssi.2006.07.036
关键词
indium tin oxide; Fermi level; high pressure XPS; surface states
The Fermi level position at surfaces of tin-doped indium oxide (ITO) thin films has been recorded during oxygen exposure using high-pressure photoelectron spectroscopy at the BESSY storage ring. The rate of Fermi level shifts varies considerably depending on the surface electron concentration, which is determined by the Fermi level position with respect to the energy of surface states. (c) 2006 Elsevier B.V. All rights reserved.
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