4.6 Article

All electrical measurement of spin injection in a magnetic p-n junction diode

期刊

PHYSICAL REVIEW B
卷 74, 期 24, 页码 -

出版社

AMER PHYSICAL SOC
DOI: 10.1103/PhysRevB.74.241302

关键词

-

向作者/读者索取更多资源

Magnetic p-n junction diodes are fabricated to investigate spin-polarized electron transport. The injection of spin-polarized electrons in a semiconductor is achieved by driving electrons from a ferromagnetic injector (Fe), into a bulk semiconductor (n-GaAs) via Schottky contact. For detection, a diluted magnetic semiconductor (p-GaMnAs) layer is used. Clear magnetoresistance was observed only when a high forward bias was applied across the p-n junction.

作者

我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。

评论

主要评分

4.6
评分不足

次要评分

新颖性
-
重要性
-
科学严谨性
-
评价这篇论文

推荐

暂无数据
暂无数据