期刊
IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS II-EXPRESS BRIEFS
卷 53, 期 12, 页码 1348-1352出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TCSII.2006.885073
关键词
AC coupling; capacitive coupling; chip-to-chip communication; multichip module; proximity communication; silicon-on-insulator (SOI); silicon-on-sapphire (SOS); threedimensional (3-D) integration
We report on inter-chip bidirectional communication and power transfer between two stacked chips. The experimental prototype system components were fabricated in a 0.5-mu m silicon-on-sapphire CMOS technology. Bi-directional communication between the two chips is experimentally measured at 1 Hz - 15 MHz. The circuits on the floating top chip are powered with capacitively coupled energy using a charge pump. This is the first demonstration of simultaneous nongalvanic power and data transfer between chips in a stack. The potential use in 3-D VLSI is aimed at reducing costs and complexity that are associated with galvanic inter-chip vias in 3-D integration.
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