Electric-field effect on the spin-dependent resonance tunneling

A theory of spin-dependent resonance tunneling through a double-barrier heterostructure in the presence of an electric field is developed. Spin-orbit interaction is taken into account by introducing the Dresselhaus term into the effective Hamiltonian. The possibility of fabricating the spin detectors and injectors based on a GaAlSb nonmagnetic semiconductor heterostructure controlled by electric field is analyzed.