期刊
HIGH PRESSURE RESEARCH
卷 26, 期 4, 页码 513-518出版社
TAYLOR & FRANCIS LTD
DOI: 10.1080/08957950601101787
关键词
GaSe; InSe; high pressure; transport properties
We performed high-pressure Hall effect and resistivity measurements in p-type GaSe and InSe up to 12 GPa. The pressure behaviour of the transport parameters shows dramatic differences between both materials. In GaSe, the hole concentration and mobility increase moderately and continuously. In InSe, the hole mobility raises rapidly and the hole concentration increases abruptly near 0.8 GPa. The observed results are attributed to the different pressure evolution of the valence-band structure in each material. In InSe a carrier-type inversion is also detected near 4.5 GPa.
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