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New diamond anvil cell system for in situ resistance measurement under extreme conditions

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REVIEW OF SCIENTIFIC INSTRUMENTS
卷 77, 期 12, 页码 -

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AMER INST PHYSICS
DOI: 10.1063/1.2400669

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We report an alumina-encapsulated microcircuit on a diamond anvil for high-pressure and high-temperature electrical conductivity measurement. An alumina thin film was deposited on a diamond anvil as a thermal insulation layer for laser heating, on which a molybdenum film was deposited and photolithographically fabricated to a van der Pauw circuit. The introduction of the alumina layer significantly improves the laser heating performance. This specially fabricated diamond anvil permits us to measure the resistivity of (Mg0.875Fe0.125)(2)SiO4 at 3450 K and 35 GPa in a laser-heated diamond anvil cell. We expect to substantially extend the pressure-temperature scale of in situ resistivity measurement. (c) 2006 American Institute of Physics.

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