期刊
MICROELECTRONICS JOURNAL
卷 37, 期 12, 页码 1446-1450出版社
ELSEVIER SCI LTD
DOI: 10.1016/j.mejo.2006.05.024
关键词
molecular beam epitaxy; stacked quantum dot; defect
We propose the growth of thick 'spacer' layers (d) for high-quality 10-stack InAs/GaAs quantum dots (QDs) emitting at 1.23 pin without the use of strain reduction layers (SRLs). All samples were grown using molecular beam epitaxy (MBE) and extensively characterised using X-ray diffraction, optical spectroscopy and microscopy techniques. We demonstrate that for d < 50 nm, large 'volcano-like' defects are formed at the top of the stacked structure, while for d = 50 nm, these features were not observed. The process of suppressing these abnormal defects has resulted in significant photoluminescence (PL) enhancement, paving the way for the realisation of defect-free QD laser devices. (c) 2006 Elsevier Ltd. All rights reserved.
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