Electrical characteristics of flexible organic static induction transistors under bending conditions

Organic static induction transistors (OSITs) with vertical channel structures that operate at low voltages have potential as components of portable or ubiquitous devices. In this study, the static characteristics of pentacene OSITs on flexible substrates were examined under bending conditions. Bending tests of the flexible substrate were carried out under various compressive and tensile strains and at various bending radii. The results demonstrate that OSITs exhibit stable electrical characteristics at compressive and tensile strains up to a bending radius of 5 mm, suggesting a possible application as transistors in the field of flexible electronics. (c) 2006 American Institute of Physics.