期刊
ADVANCED MATERIALS
卷 18, 期 23, 页码 3179-+出版社
WILEY-V C H VERLAG GMBH
DOI: 10.1002/adma.200601434
关键词
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An organic field-effect transistor (OFET) memory device based on pentacene poly(alpha-methyl styrene) gate dielectric layer (P alpha MS, see figure) that has charge-trapping ability (an electret). The device has excellent non-volatile OFET memory characteristics, believed to originate from the stored charges in PaMS layer and transferred from the semiconductor to the polymeric gate electret.
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