The authors have examined the thermal stability of amorphous, molecular beam deposited lanthanum scandate dielectric thin films on top of Si (100) after a 1000 degrees C, 10 s rapid thermal anneal. After the anneal, crystallization of LaScO3 is observed. Excellent suppression of lanthanum and scandium diffusion into the substrate silicon is indicated by the back-side secondary ion mass spectrometry (SIMS) analyses. In contrast, front-side SIMS and high-resolution electron energy loss analyses of the amorphous Si/LaScO3/Si (100) stack indicated the outdiffusion of lanthanum and scandium into the silicon capping layer during the anneal. (c) 2006 American Institute of Physics.
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