期刊
JOURNAL OF ALLOYS AND COMPOUNDS
卷 426, 期 1-2, 页码 12-21出版社
ELSEVIER SCIENCE SA
DOI: 10.1016/j.jallcom.2006.02.004
关键词
semiconductors; crystal growth; impurities in semiconductors; X-ray diffraction; light absorption and reflection
In the present work the deformations induced by hydrogen and oxygen atoms in CdTe crystals have been analyzed looking at their influence on the middle infrared (MIR) and far infrared (FIR) reflectivity spectra. Comparison of the hydrogenated CdTe phonon structure profiles confirms the presence of hydrogen atoms bounded inside the lattice. The possible localization of hydrogen and oxygen ions within the tetrahedron coordinated lattice is discussed in the framework of a model that shows a good agreement with recent MIR experiments carried out on hydrogenated CdTe crystals. (c) 2006 Elsevier B.V. All rights reserved.
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