4.7 Article

Model considerations on hydrogen distribution in hydrogenated CdTe

期刊

JOURNAL OF ALLOYS AND COMPOUNDS
卷 426, 期 1-2, 页码 12-21

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ELSEVIER SCIENCE SA
DOI: 10.1016/j.jallcom.2006.02.004

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semiconductors; crystal growth; impurities in semiconductors; X-ray diffraction; light absorption and reflection

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In the present work the deformations induced by hydrogen and oxygen atoms in CdTe crystals have been analyzed looking at their influence on the middle infrared (MIR) and far infrared (FIR) reflectivity spectra. Comparison of the hydrogenated CdTe phonon structure profiles confirms the presence of hydrogen atoms bounded inside the lattice. The possible localization of hydrogen and oxygen ions within the tetrahedron coordinated lattice is discussed in the framework of a model that shows a good agreement with recent MIR experiments carried out on hydrogenated CdTe crystals. (c) 2006 Elsevier B.V. All rights reserved.

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