Current-voltage behavior in hole-only single-carrier devices with self-assembling dipole molecules on indium tin oxide anodes

The authors report the use of chemically modified indium tin oxide (ITO) with different binding groups (-COCl and -PO2Cl2) of p-chlorobenzene derivatives forming effective monolayers to control the work function of ITO and hence to enhance the hole injection. The enhanced hole injection is studied by measuring current density-voltage (J-V) characteristics. The behavior of J-V characteristics caused by varying the ITO work function in hole-only single-carrier devices with a hole transport layer of N,N-'-diphenyl-N,N-'-bis(3-methylphenyl)-1,1(')-biphenyl-4,4(')-diamine is examined. Upon grafting with p-chlorophenylphosphoryl dichloride, the J-V characteristics show a space-charge-limited conduction behavior. Such modified ITO anodes lead to improvements in the device properties. (c) 2006 American Institute of Physics.