期刊
CHEMICAL PHYSICS LETTERS
卷 433, 期 1-3, 页码 71-74出版社
ELSEVIER
DOI: 10.1016/j.cplett.2006.11.022
关键词
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Recently, Cd-free wide-gap CuInS2-based 'CIS' thin film solar cells with a [Zn(S,O)/ZnS] bi-layer instead of a CdS buffer were developed, which (after post-annealing) showed comparable power conversion efficiencies as CdS-buffered references. To elucidate whether the heat treatment changes the electronic structure of the [Zn(S,O)/ZnSYCIS heterointerface, which could explain the performance improvement, we have investigated corresponding structures by X-ray and UV photoelectron as well as optical spectroscopy before and after post-annealing. A heat-treatment-induced increase of the band bending in the CIS absorber could be identified, which correlates with an improved open circuit voltage of respective solar cells after post-annealing. (c) 2006 Elsevier B.V. All rights reserved.
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