期刊
IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS II-EXPRESS BRIEFS
卷 54, 期 1, 页码 4-8出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TCSII.2006.884113
关键词
figure of merit (FOM); inductive peaking; low-noise amplifier (LNA); noise figure (NF); wideband amplifiers
In this brief, the design of a low-power inductorless wideband low-noise amplifier (LNA) for worldwide interoperability for microwave access covering the frequency range from 0.1 to 3.8 GHz using 0.13-mu m CMOS is described. The core consumes 1.9 mW from a 1.2-V supply. The chip performance achieves S 11 below -10 dB across the entire band and a minimum noise figure of 2.55 dB. The simulated third-order input intercept point is -2.7 dBm. The voltage gain reaches a peak of 11.2 dB in-band with an tipper 3-dB frequency of 3.8 GHz, which can be extended to reach 6.2 GHz using shunt inductive peaking. A figure of merit is devised to compare the proposed designs to recently published wideband CMOS LNAs.
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