期刊
JOURNAL OF CRYSTAL GROWTH
卷 298, 期 -, 页码 625-630出版社
ELSEVIER SCIENCE BV
DOI: 10.1016/j.jcrysgro.2006.10.082
关键词
nanostructures; metal-organic vapor phase epitaxy; semiconducting gallium arsenide
We studied the influence of the substrate preparation and the growth conditions important to fabricate GaAs nanowires (NWs) with metal-organic vapor phase epitaxy. The growth parameters temperature, precursor partial pressures and growth duration were investigated. The definite choice of the V/III ratio enables NW length growth independent on the diameter. By investigating the temporal evolution of the GaAs-NW growth a diameter-dependent growth rate could be determined. Applying nanosphere lithography arranged GaAs-NW arrays were achieved. The NWs morphology and real structure was investigated using (high-resolution) transmission electron microscopy and selective area diffraction. The twin formation in GaAs NWs was investigated. A crystallographic model is presented. (c) 2006 Elsevier B.V. All rights reserved.
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