期刊
ACS APPLIED MATERIALS & INTERFACES
卷 7, 期 38, 页码 21235-21244出版社
AMER CHEMICAL SOC
DOI: 10.1021/acsami.5b05222
关键词
inorganic p-type films; photodiode; PEDOT:PSS electrode; semitransparent; ZnO UV detectors
资金
- NSFC Major Research Plan on Nanomanufacturing [91323303]
- Natural Science Foundation of China [51572216, 61176056]
- 111 program [B14040]
- Institute of Photonics and Photo-Technology, Provincial Key Laboratory of Photoelectronic Technology, Northwest University, China
The ZnO homogeneous pn junction photodiode is quite difficult to fabricate due to the absence of stable p-type ZnO. So exploring reliable p-type materials is necessary to build a heterogeneous pn junction with n-type ZnO. Herein, we develop a simple and low-cost solution-processed method to obtain inorganic p-type CuI/CuSCN composite film with compact morphology, high conductivity, and low surface state.. The improved performance of CuI/CuSCN composite film can be confirmed based on high-rectification ratio, responsivity, and open voltage of ZnO-CuI/CuSCN photodiode UV detectors. Moreover, photodiodes with novel top electrodes are investigated. Compared with commonly used Au and graphene/Ag nanowire (NWs) electrode, poly(3,4-ethylenedioxythiophene):poly(4-styrenesulfonate) (PEDOT:PSS) electrode prepared by Meyer rod-coating technique opens one route to obtain a semitransparent photodiode. The photodiode with PEDOT:PSS as the top electrode under reverse illumination has the highest photocurrent density due to higher UV transmittance of PEDOT:PSS transparent electrode compared with ITO glass. The low-energy consumption, and high responsivity, UV to visible rejection ratio and air stability make this ZnO-CuI/CuSCN photodiode quite promising in the UV-A detection field.
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