Quantum efficiency and formation of the emission line in light-emitting diodes based on InGaN/GaN quantum well structures

The spectra of electroluminescence, photoluminescence, and photocurrent for the In0.2Ga0.8N/GaN quantum-well structures are studied to clarify the causes for the reduction in quantum efficiency with increasing forward current. It is established that the quantum efficiency decreases as the emitting photon energy approaches the mobility edge in the In0.2Ga0.8N layer. The mobility edge determined from the photocurrent spectra is E-me = 2.89 eV. At the photon energies hv > 2.69 eV, the charge carriers can tunnel to nonradiative recombination centers with a certain probability, and therefore, the quantum efficiency decreases. The tunnel injection into deep localized states provides the maximum electroluminescence efficiency. This effect is responsible for the origin of the characteristic maximum in the quantum efficiency of the emitting diodes at current densities much lower than the operating densities. Occupation of the deep localized states in the density-of-states tails in InGaN plays a crucial role in the formation of the emission line as well. It is shown that the increase in the quantum efficiency and the red shift of the photoluminescence spectra with the voltage correlate with the changes in the photocurrent and occur due to suppression of the separation of photogenerated carriers in the field of the space charge region and to their thermalization to deep local states.