期刊
IEEE TRANSACTIONS ON POWER ELECTRONICS
卷 22, 期 1, 页码 3-12出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TPEL.2006.886651
关键词
insulated gate bipolar transistors (IGBT); junction temperature measurement; neutral point clamped voltage source converter (NPC VSC); thermal modeling
The design of a power converter must guarantee that the operating junction temperatures nu(j) of all devices do not exceed their limits under all specified operating conditions. Usually, this is ensured by a simulative or analytical junction temperature estimation based on simple electrical and thermal models and semiconductor datasheet values. This paper discusses the difficulties and quantifies the limitations of this approach on the example of a three-level neutral point clamped voltage source converter (NPC VSC) with insulated gate bipolar transistors. The calculations are compared to the results of direct junction temperature measurements with an infrared camera. The paper also provides the experimental proof for the unequal loss and junction temperature distribution in the three-level NPC VSC.
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