期刊
ELECTROCHEMICAL AND SOLID STATE LETTERS
卷 10, 期 11, 页码 H344-H346出版社
ELECTROCHEMICAL SOC INC
DOI: 10.1149/1.2777875
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In this study we successfully demonstrate a method for Ag/Au diffusion wafer bonding. We were able to achieve a high-meltingpoint bonding interface at a relatively low bonding temperature of 150 C. The Ag/Au interdiffusion coefficient is defined against the Au content. Au atoms have a faster diffusion rate in the Ag matrix layer, which causes the Ag/Au interface to move toward the Au side over time. The use of this method of Ag/Au diffusion bonding makes the fabrication of high-power thin-GaN light-emitting diode chips on Si wafers a feasible possibility. (c) 2007 The Electrochemical Society. All rights reserved.
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