期刊
JOURNAL OF THE ELECTROCHEMICAL SOCIETY
卷 154, 期 1, 页码 G18-G23出版社
ELECTROCHEMICAL SOC INC
DOI: 10.1149/1.2388733
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In this paper, three approaches to incorporating nitrogen in CoTiO3 high-k dielectric films, ion implantation of N-2(+), ion implantation of N+, and N2O plasma treatment have been investigated for the new CoTiO3 high-k dielectrics. All three methods reduced the leakage currents and improved the breakdown characteristics but the N2O-plasma treatment produced the best-behaved C-V curves, when compared to the untreated control samples. (c) 2006 The Electrochemical Society.
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