期刊
2007 IEEE INTERNATIONAL ELECTRON DEVICES MEETING, VOLS 1 AND 2
卷 -, 期 -, 页码 319-+出版社
IEEE
DOI: 10.1109/IEDM.2007.4418935
关键词
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A cross-spacer phase change memory (PCM) cell with ultra-small lithography-independent contact area for reduced writing current has been successfully demonstrated. By crossing the spacer sidewalls of phase change and heater material, a small contact area of similar to 1,000 nm(2) with 0.23 MA reset current is therefore obtained. The result of a derived 2-bit per cell (Chain) structure is also shown. The cross-spacer cell structure is a potential candidate for PCM with multi-bit per cell in one PC layer.
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