期刊
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
卷 136, 期 1, 页码 37-40出版社
ELSEVIER SCIENCE SA
DOI: 10.1016/j.mseb.2006.08.058
关键词
indium tin oxide; sputtering; annealing; electro-optical; structural
Indium tin oxide (ITO) thin films were deposited on glass substrates by RF sputtering system at different sputtering pressure (SP) (20-34 mTorr) and room temperature. The sputtering pressure effects on the deposition rate, electro-optical and structural properties of the as-deposited films were systematically investigated. The optimum sputtering pressure of 27 mTorr, giving a good compromise between electrical conductivity and optical transmittance was found to deposit films. The films were heat-treated in vacuum (200-450 degrees C) and their electro-optical and structural properties investigated with temperature. A criterion factor Q, which is the ratio between the normalized average transmission to normalized resistivity was defined. It has been observed that Q has its maximum value for heat treatment at 400 degrees C and the X-ray diffraction (XRD) and scanning electron microscopy (SEM) analysis proves the films have preferred crystal growth towards (2 2 2) direction and average size of grains are 35-40 nm. (c) 2006 Elsevier B.V. All rights reserved.
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