期刊
SENSORS AND ACTUATORS B-CHEMICAL
卷 121, 期 1, 页码 219-230出版社
ELSEVIER SCIENCE SA
DOI: 10.1016/j.snb.2006.09.039
关键词
anodically oxidized TiO2; nanoholes; Pd electrode; H-2 sensor; Schottky barrier; diodo-type sensor; sensing mechanism
Hydrogen sensing properties of TiO2 thin films prepared by different methods and equipped with different kinds of metal electrodes have been tested. The most developed submicron-sized pore structure was found in the TiO2 thin film prepared by anodic oxidation of a Ti metal plate in a H2SO4 solution at 20 degrees C. The sensor fabricated with this film and a Pd electrode showed the highest H-2 response among the sensors fabricated with different TiO2 films and electrode metals at elevated temperatures. This TiO2 thin film sensor equipped with a Pd electrode can be classified into a diode-type sensor from the change in I-V curve induced by H-2, and is characterized with reversible H, response even in N-2 atmosphere. The H-2 sensing mechanism is suggested to arise from dissolution of H atoms into the Pd electrode and a decrease in Schottky barrier height at the interface between the Pd electrode and the TiO2 thin film. Although the present sensor showed pretreatment-dependent H-2 response properties, modification of the Pd electrode was found to be effective for reducing or improving the pretreatment-dependent H-2 response properties. (c) 2006 Elsevier B.V. All rights reserved.
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