期刊
PHYSICAL REVIEW B
卷 75, 期 7, 页码 -出版社
AMERICAN PHYSICAL SOC
DOI: 10.1103/PhysRevB.75.075329
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资金
- National Research Foundation of Korea [R16-2003-005-01001-0, 과06A1104] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
Dense Pb overlayers on Si(111) are important as the wetting layer for anomalous Pb island growth as well as for their own complex devil's-staircase phases. The electronic structures of dense Pb overlayers on Si(111) were investigated in detail by angle-resolved photoemission. Among the series of ordered phases found recently above one monolayer, the low-coverage root 7x root 3 and the high-coverage 14x root 3 phases are studied; they are well ordered and form reproducibly in large areas. The band dispersions and Fermi surfaces of the two-dimensional (2D) electronic states of these overlayers are mapped out. A number of metallic surface-state bands are identified for both phases with complex Fermi contours. The basic features of the observed Fermi contours can be explained by overlapping 2D free-electron-like Fermi circles. This analysis reveals that the 2D electrons near the Fermi level of the root 7x root 3 and 14x root 3 phases are mainly governed by strong 1x1 and root 3x root 3 potentials, respectively. The origins of the 2D electronic states and their apparent Fermi surface shapes are discussed based on recent structure models.
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