期刊
SEMICONDUCTOR SCIENCE AND TECHNOLOGY
卷 22, 期 2, 页码 29-34出版社
IOP PUBLISHING LTD
DOI: 10.1088/0268-1242/22/2/006
关键词
-
Monolithic CMOS compatible AlGaInP visible LED arrays have been demonstrated on a novel platform called silicon on lattice-engineered substrate (SOLES). SOLES wafers are based on Si1-xGex virtual substrate technology and are suitable for the practical fabrication of SOI CMOS circuits and III-V-based optoelectronic devices on a common silicon substrate. A combination of oxide-oxide wafer bonding and hydrogen-induced exfoliation was used to transfer a thin layer of device-quality silicon on insulator on the top of the Si1-xGex buffers graded to 100% Ge to realize SOLES. Epitaxial layers of a double heterojunction AlGaInP LED emitting near the red region of the visible spectrum (lambda = 671 nm) were grown by MOCVD on SOLES wafers using a patterned oxide hard mask. CMOS compatibility was achieved by accessing the n-GaAs cathode of the LED through the underlying n-Ge layer of the Si1-xGex graded buffer rather than etching through the LED stack. The LED was capped with Si to avoid exposing CMOS tools to III-V materials during processing. The Si anode and Ge cathode of the resulting LED structure were contacted using Ti/Al CMOS compatible metallurgy. The prototype array is an important step towards the realization of monolithically integrated optical interconnects in high speed digital systems.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据