期刊
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
卷 10, 期 1, 页码 41-48出版社
ELSEVIER SCI LTD
DOI: 10.1016/j.mssp.2006.08.027
关键词
HBr/O-2; polysilicon etch; brominated silicon oxide; notching
类别
资金
- National Research Foundation of Korea [과C6A2001] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
The role of HBr and oxygen on the etch selectivity and the post-etch profile in a polysilicon/oxide etch using HBr/O-2 based high density plasma was studied. HBr/O-2-based polysilicon etch process used in this study seems to be highly selective to the underlying oxide and produce a dielectric fill-friendly post-etch profile depending on the flow rates of HBr and oxygen. When appropriate amounts of HBr and oxygen (similar to 30 sccm of HBr and similar to 3 seem of oxygen) are present in the etch plasma, brominated silicon oxide seems to be deposited on the original gate oxide and the gate stack sidewall from the reaction of SiBrx (reaction product during polysilicon etch step) and oxygen during the HBr/O-2-based oxide etch process. The deposited brominated oxide on the thin gate oxide seems to make the HBr/O-2-based plasma etch process extremely selective to the thin gate oxide by protecting the underlying gate oxide. The deposited brominated oxide on the gate stack sidewall seems to prevent the notching by protecting the sidewall during gate stack etching. The etch rate of the brominated oxide seems to be much faster than that of the thermal oxide during the 200:1 diluted HF cleaning. However, the deposited brominated oxide on the thin gate oxide and the gate stack sidewall during the plasma etching survived the following 1 min 200:1 diluted HF cleaning, as was observed in a TEM micrograph (Fig. 2(a)). (0) 2006 Elsevier Ltd. All rights reserved.
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