Properties of 2D electron gas in AlGaAs/GaAs heterojunctions with thin AlGaAs layers

Transport properties of a 2D electron gas located at a short distance from the surface (15-32.5 nm) in an AlGaAs/GaAs heterojunction were studied. A pronounced effect of the surface on the behavior of the conductivity of the 2D electron gas, as well as metallic gate screening of the scattering of two dimensional electrons by charged centers, were observed.