期刊
IEEE JOURNAL OF SOLID-STATE CIRCUITS
卷 42, 期 2, 页码 302-312出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/JSSC.2006.889390
关键词
breakdown voltage (BV); breakdown voltage doubler; BV-doubler; breakdown voltage multiplier; BV-multiplier; driver; optical modulator driver; SiGe
A novel breakdown voltage (BV) multiplier is introduced that makes it possible to generate high output voltage swings using transistors with low breakdown voltages. The timing analysis of the stage is used to optimize its dynamic response. A 10 Gb/s optical modulator driver with a differential output voltage swing of 8 V on a 50 Omega load was implemented in a SiGe BiCNIOS process. It uses the BV-Doubler topology to achieve output swings twice the collector-emitter breakdown voltage without stressing any single transistor.
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